Integrated passive devices with high Q inductors

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

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C257SE25006, C257SE25027, C257SE25029, C257SE25030, C257SE25031, C257SE25032, C257S532000, C257S535000, C257S536000, C257S723000, C257S724000, C257S725000, C257S728000, C257S528000, C257S685000, C257S686000, C257S777000

Reexamination Certificate

active

11520254

ABSTRACT:
The specification describes flip bonded dual substrate inductors wherein a portion of the inductor is constructed on a base IPD substrate, a mating portion of the inductor is constructed on a cover (second) substrate. The cover substrate is then flip bonded to the base substrate, thus mating the two portions of the inductor. Using this approach, a two level inductor can be constructed without using a multilevel substrate. Using two two-level substrates yields a four-level flip bonded dual substrate inductor.

REFERENCES:
patent: 7183622 (2007-02-01), Heck et al.
patent: 7185542 (2007-03-01), Bang et al.
patent: 7232708 (2007-06-01), Morkner
patent: 2005/0014301 (2005-01-01), Hamren et al.
patent: 2005/0168306 (2005-08-01), Cohn et al.
patent: 2005/0287785 (2005-12-01), Lee
patent: 2006/0022290 (2006-02-01), Chen et al.
patent: 2007/0102733 (2007-05-01), Zhou et al.

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