Integrated optoelectronic device and method of fabricating...

Details Integrated optoelectronic device and method of fabricating... Integrated optoelectronic device and method of fabricating...

2008-03-04

2008-03-04

Font, Frank G. (Department: 2883)

Optical waveguides

Planar optical waveguide

C385S002000, C385S008000, C385S009000, C385S014000, C385S015000, C385S130000, C385S131000, C385S132000, C438S029000, C438S030000, C438S031000

Reexamination Certificate

active

11701467

ABSTRACT:
An integrated optoelectronic device includes optical waveguide elements containing InGaAlAs as a principal component, formed on an InP substrate and connected in an end-to-end fashion by butt jointing. An InGaAsP layer is formed on the InP substrate to suppress the mass transport of InP during the fabrication of the integrated optoelectronic device. The InGaAsP layer is formed before the InP substrate is heated at a crystal growth temperature on the order of 700° C. to form the InGaAlAs optical waveguide element.

REFERENCES:
patent: 6399404 (2002-06-01), Sakata
patent: 2007/0014508 (2007-01-01), Chen et al.
patent: 2002-324936 (2001-04-01), None
patent: 2005-353910 (2004-06-01), None
Kitatani, T, et al., “Evaluation of the Optical-Coupling Efficiency of InGaAlAs-InGaAsP Butt Joint Using Novel Multiple Butt-Jointed Laser”, IEEE Photonics Technology Letters, vol. 17, No. 6, Jun. 2005, pp. 1148-1150.

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