Integrated opto-electronic relay using a semiconductor with pers

Details Integrated opto-electronic relay using a semiconductor with pers Integrated opto-electronic relay using a semiconductor with pers

1981-02-12

1983-10-25

Davie, James W.

357 16, 357 17, 357 30, 357 83, H01G 3112, H01G 2714

Patent

active

044122357

ABSTRACT:
Integrated opto-electronic relay of the type comprising a first semiconductor layer material having a persistent photoconductivity which is deposited on a major surface of an insulating substrate and is provided with two electrical contacts, a second semiconductor layer deposited on the opposite major surface of the insulating substrate provided with two electrical contacts and functioning as both an optical radiation source when forward biased and as a thermal radiation source when reversed biased, the radiation directed onto the first semiconductor layer to induce persistent photoconductivity in the first layer when optically exposed and to eliminate the conductivity when thermally exposed, and an enclosure enabling low temperature control of the first layer having persistent photoconductivity. The invention also relates to a switching matrix incorporating a plurality of these relays.

REFERENCES:
patent: 3748480 (1973-07-01), Coleman
patent: 4167791 (1979-09-01), Banavar et al.
patent: 4186407 (1980-01-01), Delagebeaudeuf et al.
R. J. Nelson, "Long-lifetime photoconductivity effect in n-type GaAlAs", Applied Physics Letters, vol. 31, No. 5 (1977), pp. 351-353.
C. J. Nuese, M. Ettenberg, R. E. Enstrom, and H. Kressel, "Cw laser diodes and high-power arrays in In.sub.x Ga.sub.1-x As for 1.06-.mu.m emission", Applied Physics Letters, vol. 24, No. 5 (1974), pp. 224-227.

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