Integrated optical waveguide fabrication by ion implantation

Details Integrated optical waveguide fabrication by ion implantation Integrated optical waveguide fabrication by ion implantation

1984-05-07

1985-06-04

Newsome, John H.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

427163, B05D 306

Patent

active

045214433

ABSTRACT:
A method for fabricating optical waveguides and other optical devices. Nitrogen ions are implanted by ion bombardment in a substrate composed of silicon dioxide. Damage to the atomic structure caused by the bombardment is removed by annealing to obtain a low-loss device. The chemical interaction of the nitrogen ions with the silicon dioxide creates an implanted region having an increased index of refraction, which implanted region retains the increased refractive index after annealing.

REFERENCES:
patent: 3562022 (1971-02-01), Shierin
patent: 4145457 (1979-05-01), Kersten
patent: 4262056 (1981-04-01), Hubler et al.
patent: 4375312 (1983-03-01), Tangonan
patent: 4411678 (1983-10-01), Arai
patent: 4465337 (1984-08-01), Baron et al.
Standley et al., "Properties of Ion-Bombarded Fused Quartz for Integrated Optice", Applied Optics, vol. II, pp. 1313-1316, (Jun. 1972).
Webb et al., "Refractive Index Profiles Induced by Ion Implantation Into Silica", J. Phys. D.: Applied Physics, vol. 9, pp. 1343-1354, (1976).

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