Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With large area flexible electrodes in press contact with...
Patent
1991-03-07
1992-06-09
Prenty, Mark
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With large area flexible electrodes in press contact with...
257 55, H01L 2714, H01L 2906
Patent
active
051211823
ABSTRACT:
In an integrated optical semiconductor device having an InGaAsP optical waveguide and an InGaAs light absorption layer integrated together therein, the light absorption layer is formed to become gradually thicker in a traveling direction of light in the optical waveguide so that the effective absorption coefficient of the light absorption layer with respect to the optical waveguide can be set to become gradually larger in the traveling direction in the optical waveguide.
Kuroda Fumihiko
Suzuki Nobuo
Kabushiki Kaisha Toshiba
Prenty Mark
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