Integrated optical device including a vertical lasing...

Optical: systems and elements – Optical amplifier – Particular active medium

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C359S337000

Reexamination Certificate

active

07110169

ABSTRACT:
An intergrated optical device comprises a vertically lasing semiconductor optical amplifier (VLSOA) and an optical element integrated onto a common substrate. Example optical elements include waveguides, unguided transparent regions, and active optical devices (including additional VLSOAs). The integrated device may be fabricated using a number of different methods, including based on selective area epitaxy, impurity induced disordering, etch and fill and silicon optical bench.

REFERENCES:
patent: 3467906 (1969-09-01), Cornely et al.
patent: 3828231 (1974-08-01), Yamamoto
patent: 4794346 (1988-12-01), Miller
patent: 5436759 (1995-07-01), Dijaili et al.
patent: 5949807 (1999-09-01), Fujimoto et al.
patent: 5960024 (1999-09-01), Li et al.
patent: 6044100 (2000-03-01), Hobson et al.
patent: 6115517 (2000-09-01), Shiragaki et al.
patent: 6647041 (2003-11-01), Verma et al.
patent: 6690845 (2004-02-01), Yoshimura et al.
patent: 56006492 (1981-01-01), None
patent: 01129483 (1987-11-01), None
patent: 10190147 (1998-07-01), None
Alcatel, “Alcatel Optronics introduces a Gain-Clamped Semiconductor Optical Amplifier,”Press Release for Immediate Publication, OFC '98, San Jose (Feb. 1998), i unnumbered page.
Bauer, B. et al., “Gain Stabilization of a Semiconductor Optical Amplifier by Distributed Feedback,”IEEE Photonics Technology Letters, vol. 6, No. 2 (Feb. 1994), pp. 182-185.
Dorgeuille, F., et al., “1.28 Tbit/s Throughput 8×8 Optical Switch Based on Arrays of Gain-clamped Semiconductor Optical Amplifier Gates,” Optical Fiber Communication Conference, vol. 4, pp. 221-223, Mar. 2000.
Dorgeuille, F., et al., H., “Fast Optical Amplifier Gate Array for WDM Routing and Switching Applications,” OFC '98 Technical Digest, pp. 42-44, 1998.
Doussiere, P. et al., “Clamped Gain Travelling Wave Semiconductor Optical Amplifier for Wavelength Division Multiplexing Applications,” Maui, Hawaii, Sep. 19-23, 1994, New York, IEEE, US, vol. Conf. 14 (Sep. 14, 1994), pp. 185-186.
Evankow, Jr., J.D., et al., “Photonic Switching Modules Designed with Laser Diode Amplifiers,” Journal on Selected Areas in Communications, vol. 6, No. 7, pp. 1087-1095, Aug. 1988.
Gee, S. et al., “High-Power Mode-locked External Cavity Semiconductor Laser Using Inverse Bow-Tie Semiconductor Optical Amplifiers,”IEEE Journal of Selected Topics in Quantum Electronics, vol. 4, No. 2, Mar./Apr. 1998, pp. 209-215.
Jeong, G., et al., “Gain Optimization in Switches Based on Semiconductor Optical Amplifiers,” Journal of Lightwave Technology, Vo. 13, No. 4, pp. 598-605, Apr. 1995.
Joyner, C.H. et al., “Extremely Large Band Gap Shifts for MQW Structures by Selective Epitaxy on SiO2 Masked Substrates,”IEEE Photonics Technology Letters, vol. 4, No. 9 (Sep. 1992), pp. 1006-1009.
Kitamura, S., et al., “Spot-size Converter Integrated Semiconductor Optical Amplifiers for Otical Gate Applications,” IEEE Journal of Quantum Electronics, vol. 35, No. 7, pp. 1067-1074, Jul. 1999.
Koyama, F., et al., “Multiple-Quantum-Well GaInAs/GaInAsP Tapered Broad-Area Amplifiers with Monolithically Integrated Waveguide Lens for High-Power Applications,” IEEE Photonics Technology Letters (Aug. 1993), vol. 5, No. 8, pp. 916-919.
Leuthold, J., et al., “All-Optical Space Switches with Gain and Principally Ideal Extinction Ratios,” IEEE Journal of Quantum Electronics, vol. 34, No. 4, pp. 622-633, Apr. 1998.
McAdams, L.R. et al., “Linearizing High Performance Semiconductor Optical Amplifiers: Techniques and Performance,” LEOS Presentation (1996), pp. 363-364.
Mutalik, V.G. et al., “Analog performance of 1310-nm gain-clamped semiconductor optical amplifiers,”OFC '97 Technical Digest, Thursday Morning, 11:15 AM, pp. 266-267.
Simon, J.C. et al., “Travelling wave semiconductor optical amplifier with reduced nonlinear distortions,”Electronics Letters, vol. 30, No. 1 (Jan. 6, 1994), pp. 49-50.
Soulage, G. et al., “Calmped Gain Travelling Wave Semiconductor Optical Amplifier as a Large Dynamic Range Optical Gate,” Alcatel Alsthom Recherche, route de Nozay, 916460 Marcoussis, France, undated, 4 unnumbered pages.
Tai, C., et al., “Dynamic Range and Switching Speed Limitations of an N×N Optical Packet Switch Based on Low-Gain Semiconductor Optical Amplifiers,” IEEE Journal of Lightwave Technology, vol. 14, No. 4, pp. 525-533, Apr. 4, 1996.
Tiemeijer, L.F. et al., “1310-nm DBR-Type MQW Gain-Clamped Semiconductor Optical Amplifiers with AM-CATV-Grade Linearity,”IEEE Photonics Technology Letters, vol. 8, No. 11 (Nov. 1996), pp. 1453-1455.
Tiemeijer, L.F. et al., “High-gain 1310 nm Semiconductor Optical Amplifier Modules with a Built-in Amplified Signal Monitor for Optical Gain Control,”IEEE Photonics Technology Letters, vol. 9, No. 3 (Mar. 1997), pp. 309-311.
Tiemeijer, L.F. et al., “Reduced Intermodulation Distortion in 1300 nm Gain-Clamped MQW Laser Amplifiers,”IEEE Photonics Technology Letters, vol. 7, No. 3 (Mar. 1995), pp. 284-286.
Toptchiyski, G., et al., “Time-Domain Modeling of Semiconductor Optical Amplifiers for OTDM Applications,” IEEE Journal of Lightwave Technology, vol. 17, No. 12, pp. 2577-2583, Dec. 1999.
van Roijen, R., et al.., “Over dB Gain from a Monolithically Integrated Optical Switch with an Amplifier,” IEEE Photnics Technology Letters, vol. 5, No. 5, pp. 529-531, May 1993.
Walker, J.D. et al., “A Gain-Clamped, Crosstalk Free, Vertical Cavity Lasing Semiconductor Optical Amplifier for WDM Applications,” summaries of the papers presnted at the topical meeting, Integrated Photonics Search; 1996 Technical Digest Series; Proceedings of Integrated Photonics; Boston, MA, USA, 29.04-02.05 1996, vol. 6, 1996, pp. 474-477.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Integrated optical device including a vertical lasing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated optical device including a vertical lasing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated optical device including a vertical lasing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3535309

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.