Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2007-10-30
2007-10-30
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S081000, C257S082000, C257S083000, C257S084000
Reexamination Certificate
active
10203241
ABSTRACT:
An improved integrated optical device (5a-5g) is disclosed containing first and second devices (10a-10g; 15a, 15e), optically coupled to each other and formed in first and second different material systems. One of the first or second devices (10a-10g, 15a, 15e) has a Quantum Well Intermixed (QWI) region (20a, 20g) at or adjacent a coupling region between the first and second devices (10a-10g; 15a, 15e). The first material system may be a III-V semiconductor based on Gallium Arsenide (GaAs) or Indium Phosphide (InP), while the second material may be Silica (SiO2), Silicon (Si), Lithium Niobate (LiNbO3), a polymer, or glass.
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Aitchison James Stewart
Hicks Simon Eric
Marsh John Haig
McDougall Stewart Duncan
Qiu Bo Cang
Crane Sara
Gebremariam Samuel A.
McCarter & English LLP
The University Court of the University of Glasgow
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