Integrated optical detectors

Details Integrated optical detectors Integrated optical detectors

1977-09-06

1978-11-28

Edlow, Martin H.

357 16, 357 12, 357 40, 357 45, 357 55, H01L 2714, H01L 29161

Patent

active

041278623

ABSTRACT:
A plurality n of double heterostructure photodiodes are coupled together by (n-1) interleaved n.sup.+ -p.sup.+ tunnel junctions to form a multi-layered integrated structure which has an open circuit photovoltage approaching the sum of the open circuit photovoltages of the individual photodiodes. In one embodiment, in which radiation to be detected is made incident normal to the layers, the absorbing layers of the photodiodes get progressively thicker away from the substrate. In a second embodiment, in which the radiation is made incident parallel to the layers, all of the absorbing layers have essentially the same thickness. In a third embodiment, in which radiation is made incident normal to the layers, the structure has a stepped configuration and all of the absorbing layers have essentially the same thickness.

REFERENCES:
patent: 3353114 (1967-11-01), Hanks
patent: 3514715 (1970-05-01), Kosonocky
patent: 3604987 (1971-09-01), Assour
patent: 3659159 (1972-04-01), Nogata
patent: 3852591 (1974-12-01), Lee
patent: 4015280 (1977-03-01), Matsushita
patent: 4017332 (1977-04-01), James

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