Integrated optical arrangement having at least one optical waveg

Details Integrated optical arrangement having at least one optical waveg Integrated optical arrangement having at least one optical waveg

1990-08-27

1992-06-23

Ullah, Akm E.

Optical waveguides

Planar optical waveguide

Thin film optical waveguide

385131, G02B 612

Patent

active

051250659

ABSTRACT:
An integrated optical arrangement having at least one optical waveguide integrated a substrate of semiconductor material, characterized by the waveguide being a rib waveguide comprising the p-doped material disposed on a substrate which contains a waveguiding layer which is either an n-doped or an undoped material, said arrangement having either a pn or a pin junction between the p-doped material of the rib and the n-doped or undoped material of the waveguiding layer. In addition, a method for forming the various layer is disclosed.

REFERENCES:
patent: 4185256 (1980-01-01), Scifres et al.
patent: 4685763 (1987-08-01), Tada et al.
K. Ishida et al "InGaAsP/InP Multimode Optical Switches Operated by a Carrier Induced Refractive Index Change" IOOC-ECOC '85 pp. 357-360.
J. Krauser et al "Electro-optic modulators in GaInAsP/InP" SPIE vol. 587 Optical Fiber Sources and Detectors (1985) pp. 180-187.
Charles H. Henry et al "The Effect of Intervalence Band Absorption on the Thermal Behavior of InGaAsP Lasers" IEEE Journal of Quantum Electronics, vol. QE-19, No. 6, Jun. 1983, pp. 947-952.
Markus-Christian Aman et al, "Analytical solution for the lateral current distribution in multiple stripe laser diodes" Appl. Phys. Lett., vol. 48, No. 25, Jun. 23, 1986, pp. 1710-1712.

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