Active solid-state devices (e.g. – transistors – solid-state diode – Specified wide band gap semiconductor material other than...
Reexamination Certificate
2011-02-28
2011-10-11
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Specified wide band gap semiconductor material other than...
C257S416000, C257S256000, C257SE27014, C257SE21615, C438S172000, C438S478000, C438S169000, C438S483000
Reexamination Certificate
active
08035111
ABSTRACT:
Monolithic electronic devices are providing including a high bandgap layer. A first type of nitride device is provided on a first portion of the high bandgap layer, the first nitride device including first and second implanted regions respectively defining source and drain regions of the first type of nitride device. A second type of nitride device, different from the first type of nitride device, is provided on a second portion of the high bandgap layer, the second type of nitride device including an implanted highly conductive region. At least a portion of the implanted highly conductive region of the second type of nitride device is coplanar with at least a portion of both the first and second implanted regions of the first type of nitride device.
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Cree Inc.
Myers Bigel & Sibley & Sajovec
Valentine Jami M
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