Integrated N-channel power MOS bridge circuit

Details Integrated N-channel power MOS bridge circuit Integrated N-channel power MOS bridge circuit

1985-09-06

1990-08-14

Jackson, Jr., Jerome

357 238, 357 41, 357 46, 357 48, H01L 2978

Patent

active

049491423

ABSTRACT:
The disclosed bridge circuit is fabricated using power MOS technology. Common terminals of the bridge circuit are integrated into common regions in the implementation. Electrodes, typically coupled together in the bridge circuit, are implemented by a shared conducting region in the integrated circuit of the semiconductor chip. By integrating the elements of the circuit, less area of the semiconductor chip is required as compared to an implementation involving 4 (four) discrete elements. Diodes are fabricated across the transistors to protect the elements against reverse biasing.

REFERENCES:
patent: 4288801 (1981-09-01), Ronen
patent: 4546370 (1985-10-01), Curran
patent: 4589004 (1986-05-01), Yasuda et al.
Inter. Rectifier, Hexfet Databook, El Segundo, Calif., pp. 12, 13, 36-49, 1981.

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