Integrated multiple transistors with different current gains

Details Integrated multiple transistors with different current gains Integrated multiple transistors with different current gains

1974-05-31

1976-07-13

Larkins, William D.

357 34, 357 35, 357 36, 357 40, 357 48, 357 86, H01L 2702, H01L 2704, H01L 2972

Patent

active

039697487

ABSTRACT:
A multiple transistor consists of vertical and lateral transistors, the collector region of the lateral transistor is formed by diffusion within the diffused base region of the vertical transistor simultaneously with the emitter region of the vertical transistor, into a structure in which the base of the vertical transistor and the collector of the lateral transistor are short-circuited. As a result the current gain of the lateral transistor can be varied by changing the area of the collector region.

REFERENCES:
patent: 3233125 (1966-02-01), Buie
patent: 3283170 (1966-11-01), Buie
patent: 3391311 (1968-07-01), Lin et al.
patent: 3510735 (1970-05-01), Potter
patent: 3566218 (1971-02-01), Widlar et al.
patent: 3609479 (1971-09-01), Lin et al.
patent: 3631309 (1971-12-01), Myers
patent: 3683270 (1972-08-01), Mattis
patent: 3761898 (1973-09-01), Pao
patent: 3766449 (1973-10-01), Bruchez

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