Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1992-04-02
1994-08-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257583, 257579, 257127, H01L 2952, H01L 2970
Patent
active
053410203
ABSTRACT:
An integrated array of minute transistors, or cells, either of the type having emitters in the form of a mesh and bases in the form of islands, or of the type having emitters in the form of islands and bases in the form of a mesh. When a transistor chip of conventional design was connected to an inductive load such as a transformer or motor and turned off, the outer cells of the chip were more susceptible to breakdown than the inner ones. In order to make all the cells equally resistive to turnoff voltages, a first set of base openings in an insulating film on the semiconductor substrate, through which are exposed the bases of the inner cells are made larger in size than a second set of base openings in the insulating film exposing the bases of the outer cells. Additionally, in a transistor chip having meshed emitters, the peripheral annular part of the mesh is made less in width than each strip of the inner part of the mesh. In a transistor chip having emitters in the form of islands, the emitter islands associated with the outer cells are each made less in size than those associated with the inner cells.
REFERENCES:
patent: 4205332 (1980-05-01), Conti et al.
patent: 4586072 (1986-04-01), Nakatani et al.
Hardy David
Hille Rolf
Sanken Electric Co. Ltd.
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