Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2008-05-27
2008-05-27
Deo, Duy-Vu (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
C216S002000, C216S067000, C356S480000
Reexamination Certificate
active
07378346
ABSTRACT:
A method is provided for forming a monolithically integrated optical filter, for example, a Fabry-Perot filter, over a substrate (10). The method comprises forming a first mirror (16) over the substrate (10). A plurality of etalon material layers (32, 34, 36, 38) are formed over the mirror (16), and a plurality of etch stop layers (42, 44, 46) are formed, one each between adjacent etalon material layers (32, 34, 36, 38). A photoresist is patterned to create an opening (54) over the top etalon material layer (38) and an etch (56) is performed down to the top etch stop layer (46). An oxygen plasma (58) may be applied to convert the etch stop layer (46) within the opening (54) to silicon dioxide (57). The photoresist patterning, etching, and applying of an oxygen plasma may be repeated as desired to obtain the desired number of levels (82, 84, 86, 88). A second mirror (72) is then formed on each of the levels (82, 84, 86, 88).
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Baker Jeffrey H.
Convey Diana J.
Holm Paige M.
Le Ngoc V.
Smith Steven M.
Deo Duy-Vu
George Patricia A.
Motorola Inc.
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