Optics: measuring and testing – With plural diverse test or art
Patent
1996-05-31
2000-06-13
Evans, F. L.
Optics: measuring and testing
With plural diverse test or art
356325, G01J 342
Patent
active
060755881
ABSTRACT:
An integrated dual beam multi-channel optical-based flux monitor and method of monitoring atomic absorption of a plurality of atomic species during epitaxial growth. Light from multiple sources is simultaneously passed through a region of deposition of material such that atomic absorption takes place. The light that passed through the region is then compared to light in a reference arm that did not pass through a region of atomic absorption. From this comparison the growth of an epitaxial layer can be carefully controlled.
REFERENCES:
patent: 3865625 (1975-02-01), Cho et al.
patent: 4300833 (1981-11-01), Harnly et al.
patent: 4815848 (1989-03-01), Hadeishi
patent: 4945254 (1990-07-01), Robbins
patent: 5038038 (1991-08-01), Weniger et al.
patent: 5066124 (1991-11-01), Wulf
patent: 5171399 (1992-12-01), Brennan et al.
patent: 5254207 (1993-10-01), Nishizawa et al.
patent: 5364492 (1994-11-01), Eckstein et al.
patent: 5399521 (1995-03-01), Celii et al.
patent: 5400739 (1995-03-01), Kao et al.
Feher et al. "Tunable Diode Laser Monitoring of Atmospheric Trace Gas Constituents" Spectrochimica Acta Part A 51 (1995), pp. 1579 and 1590. Only p. 1590 Used in Rejection 1995.
Fried et al "Versatile Integrated Tunable Diode Laser System for High Precision: Application for Ambient Measurements of OCS" Applied Optics vol. 30#15/May 20, 1991, pp. 1916-1920.
Ahearn "Optical Bridge for an Atomic Absorption Rate Monitor and Control System" IBM Tech. Disc. Bulletin, vol. 14 #June 1, 1971 pp. 148-149.
T.Y. Kometani and W. Wiegmann, "Measurements of Ga and Al in a Molecular-beam Epitaxy Chamber by Atomic Absorption Spectrometry (AAS)," J. Vac. Sci. Technol., vol. 12, No. 4, Jul./Aug. 1995, 933-936.
M.E. Klausmeier-Brown, J.E. Eckstein, I. Bozovic, and G.F. Virshup, "Accurate Measurement of Atomic Beam Flux by Pseudo-double-beam Atomic Absorption Spectroscopy for Growth of Thin-film Oxide Superconductors," Appl. Phys. Lett., vol. 60, No. 5, Feb. 3, 1992, 657-659.
S.A. Chalmers and K.P. Killeen, "Real-time Control of Molecular Beam Epitaxy by Optical-based Flux Monitoring," Appl. Phys. Lett., vol. 63, No. 23, Dec. 6, 1993, 3131-3133.
S.A. Chalmers, K.P. Killeen and E.D. Jones, "Accurate Multiple-quantum-well Growth Using Real-time Optical Flux Monitoring," Appl. Phys. Lett., vol. 65, No. 1, Jul. 4, 1994, 4-6.
S.J. Benerofe, C.H. Ahn, M.M. Wang K.E. Kihlstrom, K.B. Do, S.B. Arnason, M.M. Fejer, T.H. Geballe, M.R. Beasley and R.H. Hammond "Dual Beam Atomic Absorption Spectroscopy for Controlling Thin Film Deposition Rates," J. Vac. Sci. Technol. B, vol. 12, No. 2, Mar./Apr. 1994, 1217-1220.
C. Lu and Y. Guan, "Improved Method of Nonintrusive Deposition Rate Monitoring by Atomic Absorption Spectroscopy for Physical Vapor Deposition Processes," J. Vac. Sci. Technol. A, vol. 13, No. 3, May/Jun. 1995, 1797-1801.
Brochure, "Atomicas A New Breakthrough in Thin Film Deposition Rate Monitoring technology," Intelligent Sensor Technology, Inc., Mountain View, CA, Oct. 1994, 4 pages.
Weizhi Wang, R. H. Hammond, M. M. Fejer, C. H. Ahn and M.R. Beasley; M.D. Levenson and M. L. Bortz, "Diode-Laser-Based Atomic Absorption Monitor Using Frequency-Modulation Spectroscopy for Physical Vapor Deposition Process Control," App. Phys. Lett., vol. 67, No. 10, Sep. 4, 1995, pp. 1375-1377.
Weizhi Wang, M. M. Feher, R. H. Hammond, M. R. Beasley, and C. H. Ahn; M. L. Bortz and T. Day, "Atomic Absorption Monitor for Deposition Process Control of Aluminum at 394 nm Using Frequency-Doubled Diode Laser," Appl. Phys. Lett., vol. 68, No. 5, Feb. 5, 1996, pp. 729-731.
R. Fischer, J. Klem, T. J. Drummond, R. E. Thorne, W. Kopp, H. Morkoc and A. Y. Cho, "Incorporation Rates of Gallium and Aluminum on GaAs During Molecular Beam Epitaxy at High Substrate Temperatures," J. of Appl. Phys., vol. 54, No. 5, pp. 2508-2510, May 1983.
F. G. Celii, Y.-C. Kao, A. J. Katz, and T. S. Moise, "Real-time Monitoring of Resonant-tunneling Diode Growth Using Spectroscopic Ellipsometry," J. Vac. Sci. Technol. A, vol. 13, No. 3, pp. 733-739, May/Jun. 1995.
Jan P.A. van der Wagt and J. S. Harris, Jr., Reflection High-energy Electron Diffraction Intensity Oscillations During Molecular-Beam Epitaxy on Rotating Substrates, J. Vac. Sci. Technol. B, vol. 12, No. 2, pp. 1236-1237, Mar./Apr. 1993.
Chalmers Scott Arlen
Gossard Arthur Charles
Jackson Andrew William
Pinsukanjana Paul Ruengrit
Tofte Jan Arild
Evans F. L.
The Regents of the University of California
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