Integrated MOSgated power semiconductor device with high negativ

Details Integrated MOSgated power semiconductor device with high negativ Integrated MOSgated power semiconductor device with high negativ

1995-04-11

1997-01-07

Callahan, Timothy P.

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Accelerating switching

327365, 327377, 327427, H03K 1704

Patent

active

055921175

ABSTRACT:
A high side switch having a MOSgated power device has a control circuit which contains a control MOSFET which is connected between the gate and source of the MOSgated power device. The input signal to turn the power device on and off is connected to a level translator circuit which is, in turn, connected to an inverter circuit which drives the gate of the control MOSFET. The control MOSFET then prevents the turn on of the power MOSFET during the turn-off process. A high negative clamp voltage causes a higher di/dt reduction of current during turn off to shorten the turn-off time. The power MOS device cannot be turned on whenever V.sub.CC is low and the output voltage is negative.

REFERENCES:
patent: 4691129 (1987-09-01), Einzinger et al.
patent: 4952827 (1990-08-01), Leipold et al.
patent: 5142171 (1992-08-01), Nunogawa et al.
patent: 5371418 (1994-12-01), Leipold et al.
patent: 5446406 (1995-08-01), Gantioler et al.
patent: 5467047 (1995-12-01), Robb

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