Integrated mos high-voltage level-translation circuit, structure

Details Integrated mos high-voltage level-translation circuit, structure Integrated mos high-voltage level-translation circuit, structure

1988-01-19

1990-06-26

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307544, 307548, 307559, 307568, 307585, H03K 19017, H03K 19003, H03K 19094, H03K 17687

Patent

active

049374770

ABSTRACT:
A high-voltage level translator circuit is disclosed that is suitable for monolithic integration. The level translator circuit comprises serially-connected current sources suitably ratioed so that the gating on of one current source causes a limited voltage rise across the other current source, which is ungated. The circuit is suitable for integration in a junction-isolated monolithic pseudo-complementary CMOS format.

REFERENCES:
patent: 3407339 (1968-10-01), Booher
patent: 4101788 (1978-07-01), Baker
patent: 4191898 (1980-03-01), Ulmer
patent: 4296335 (1981-10-01), Simcoe
patent: 4305009 (1981-12-01), Miyagawa et al.
patent: 4518926 (1985-05-01), Swanson
patent: 4556804 (1985-12-01), Dewitt
patent: 4578600 (1986-03-01), Magee
patent: 4578694 (1986-03-01), Auizumi et al.
patent: 4584492 (1986-04-01), Sharp
patent: 4626704 (1986-12-01), Takata et al.
patent: 4631426 (1986-12-01), Nelson et al.
patent: 4743782 (1988-05-01), Nelson et al.
patent: 4767950 (1988-08-01), Schrenk
patent: 4810969 (1989-03-01), Fulkerson
patent: 4812863 (1989-03-01), Fitzpatrick et al.
patent: 4853563 (1989-08-01), Hill et al.
patent: 4873458 (1989-10-01), Yoshida
Fink et al "Electronics Engineers' Handbook" Second Edition-1982-McGraw-Hill-pp. 7-40; pp. 16-16-16.1g.

Affiliated with

Also associated with

Rating

Integrated mos high-voltage level-translation circuit, structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated mos high-voltage level-translation circuit, structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated mos high-voltage level-translation circuit, structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1127299