Integrated monolithic switch for high voltage applications

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 40, 357 43, 357 51, 307304, 307315, 307254, H01L 2710, H03K 2702, H03K 3353, H03K 326

Patent

active

039953076

ABSTRACT:
An integrated monolithic switch is fabricated in an epitaxial layer united to a semiconductor substrate. The switch includes a Darlington amplifier, a power output switch, a bilateral device, typically a diffused diode, and an epitaxial resistor, the combination being connected between a set of high voltage lines. The epitaxial layer has an appropriate thickness and resistivity to accommodate all active and passive elements. For a first input signal, the switch is connected to one high voltage line. For a second input signal, the switch is connected to the other high voltage line. The switch is adapted to sink current. The diode structure, when forward biased by the sinking current, forms a parasitic path to direct the sinking current to the substrate even though the high voltage lines are up. The Darlington is connected to the switch output to lower output voltage during the sinking condition.
A set of switches of the same conductivity type may be employed to drive a cross point in a gas panel display.

REFERENCES:
patent: 3500140 (1970-03-01), Makimoto et al.
patent: 3702947 (1972-11-01), Schilling
patent: 3725754 (1973-04-01), Furuhashi
patent: 3770519 (1973-11-01), Wiedmann

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