Integrated microwave semiconductor device with active and passiv

Details Integrated microwave semiconductor device with active and passiv Integrated microwave semiconductor device with active and passiv

1995-10-26

1997-11-18

Tran, Minh-Loan

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

For high frequency device

257275, 257276, 257277, 257707, 333247, H01L 2334

Patent

active

056891385

ABSTRACT:
A semiconductor device for microwave frequencies with a substrate which is provided at a first side with a semiconductor element, a passive element, and a pattern of conductive elements, while the opposed, second side is provided with a metallization which is connected to the elements present on the first side through windows formed in the substrate. The substrate consists of a silicon layer which is present on a layer of insulating material, the semiconductor element being formed in the silicon layer, and the metallization being provided on that side of the layer of insulating material which is remote from the silicon layer. The silicon layer may here have a very small thickness of, for example, 0.1 to 0.2 .mu.m. In such a thin silicon layer, bipolar and field effect transistors capable of processing signals of microwave frequencies can be formed. Since the silicon layer is thin, the influence of the conductivity of silicon on passive elements is small.

REFERENCES:
patent: 4418470 (1983-12-01), Naster et al.
patent: 4956697 (1990-09-01), Kobiki et al.
patent: 5063177 (1991-11-01), Geller et al.
patent: 5449953 (1995-09-01), Nathanson et al.

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