Integrated microelectronic assembly comprising photoconductor wi

Details Integrated microelectronic assembly comprising photoconductor wi Integrated microelectronic assembly comprising photoconductor wi

1991-10-17

1992-08-18

James, Andrew J.

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

357 5, 357 4, 357 30, H01B 1200, H01L 3912, H01L 2712, H01L 2714

Patent

active

051400014

ABSTRACT:
A beam (e.g. a focused laser beam) is utilized to irradiate the entire lateral width of a limited-extent portion of an elongated superconducting thin-film lead. The irradiated portion is converted to be non-superconducting and photoconductive. The converted portion constitutes a photodetector integrated with associated superconducting leads.

REFERENCES:
patent: 4891355 (1990-01-01), Hayashi et al.
patent: 4970395 (1990-11-01), Kruse, Jr.
patent: 5057485 (1991-10-01), Nishino et al.
patent: 5075281 (1991-12-01), Testardi
Rothschild et al. "Laser Patterning of Metal Oxide Superconductor Films by Reactive Solid State Transformation" IEEE Electron Device Letters vol. 9 No. 2 Feb. 1988, pp. 68-70.
Enomoto et al. "Optical Detector using Superconducting BaPb.sub.0.7 Bi.sub.0.3 O.sub.3 Thin Films" J. Appl. Phys. vol. 59(11) Jun. 1, 1986, pp. 3807-3814.
Hitachi Inc. "Hitachi Applies Superconductivity to Optical Switching" Techwatch Jul. 1987, p. 16.
Nishino et al. "Light Detection by Superconducting Weak Link Fabricated w/High-T.sub.c Oxide-Superconductor Film" Jap. J. Appl. Phys. vol. 25(8) Aug. 1987, pp. L1320-L1322.

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