Integrated matching networks and RF devices that include an...

Details Integrated matching networks and RF devices that include an... Integrated matching networks and RF devices that include an...

2009-02-23

2010-02-23

Lee, Calvin (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

C438S614000

Reexamination Certificate

active

07667334

ABSTRACT:
An integrated matching network includes a first die on a substrate, a second die on the substrate, and a metallization layer on the first and second dies. The second die has a capacitance, the metallization layer has an inductance, and the capacitance and inductance together provide a shunt impedance from the first die to the substrate. The integrated matching network includes a first die having a power amplifier, a second die having a capacitor, and a metal interconnect coupled to the power amplifier and the first capacitor. The metal interconnect has an inductance. The capacitor and metal interconnect form a shunt impedance.

REFERENCES:
patent: 5138436 (1992-08-01), Koepf
patent: 5646828 (1997-07-01), Degani et al.
patent: 5880517 (1999-03-01), Petrosky
patent: 6646321 (2003-11-01), Roodnat
patent: 7049692 (2006-05-01), Nishimura et al.

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