Integrated magnetoresistive sensor fabrication method and appara

Details Integrated magnetoresistive sensor fabrication method and appara Integrated magnetoresistive sensor fabrication method and appara

1993-12-03

1996-01-23

Hoang, Tu

Electrical resistors

Resistance value responsive to a condition

Magnetic field or compass

338 32H, 323368, H01L 4300

Patent

active

054868041

ABSTRACT:
A magnetoresistor is monolithically integrated with an active circuit by growing a thin film magnetoresistor on a semiconductor substrate after the substrate has been doped and annealed for the active devices. The magnetoresistor is grown through a window in a mask, with the mask and magnetoresistor materials selected such that the magnetoresistor is substantially non-adherent to the mask. InSb is preferred for the magnetoresistor, Si.sub.3 N.sub.4 for the mask and GaAs for the substrate. The non-adherence allows the mask to be substantially thinner than the magnetoresistor without impairing the removal of the mask after the magnetoresistor has been established.

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