Integrated low leakage Schottky diode

Details Integrated low leakage Schottky diode Integrated low leakage Schottky diode

2011-03-22

2011-03-22

Ho, Tu-Tu V (Department: 2818)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Bidirectional rectifier with control electrode

C257S119000, C257S155000, C257S162000, C257SE29214, C257SE29215

Reexamination Certificate

active

07910410

ABSTRACT:
An integrated low leakage Schottky diode has a Schottky barrier junction proximate one side of an MOS gate with one end of a drift region on an opposite side of the gate. Below the Schottky metal and the gate oxide is a RESURF structure of an N− layer over a P− layer which also forms the drift region that ends at the diode's cathode in one embodiment of the present invention. The N− and P− layers have an upward concave shape under the gate. The gate electrode and the Schottky metal are connected to the diode's anode. A P− layer lies between the RESURF structure and an NISO region which has an electrical connection to the anode. A P+ layer under the Schottky metal is in contact with the P− layer through a P well.

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