Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Reexamination Certificate
2008-01-09
2010-11-30
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
C257S140000, C257S141000, C257S144000, C257S557000, C257SE27015
Reexamination Certificate
active
07842968
ABSTRACT:
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region. A second lateral bipolar transistor is formed in the cathode region. As a result, substantially all of the diode current flows at the upper surface of the diode thereby minimizing the substrate leakage current. A deep highly doped region in contact with the layers forming the emitter and the base of the vertical parasitic bipolar transistor inhibits the ability of the vertical parasitic transistor to fully turn on.
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International Search Report of corresponding PCT Application No. PCT/US08/088595, dated Jun. 24, 2009, 2 pages.
Fairchild Semiconductor Corporation
Fitzgerald, Esq. Thomas R.
Hiscock & Barclay LLP
Tran Tan N
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