Integrated low leakage diode

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor

Reexamination Certificate

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Details

C257S140000, C257S141000, C257S144000, C257S557000, C257SE27015

Reexamination Certificate

active

07842968

ABSTRACT:
An integrated low leakage diode suitable for operation in a power integrated circuit has a structure similar to a lateral power MOSFET, but with the current flowing through the diode in the opposite direction to a conventional power MOSFET. The anode is connected to the gate and the comparable MOSFET source region which has highly doped regions of both conductivity types connected to the channel region to thereby create a lateral bipolar transistor having its base in the channel region. A second lateral bipolar transistor is formed in the cathode region. As a result, substantially all of the diode current flows at the upper surface of the diode thereby minimizing the substrate leakage current. A deep highly doped region in contact with the layers forming the emitter and the base of the vertical parasitic bipolar transistor inhibits the ability of the vertical parasitic transistor to fully turn on.

REFERENCES:
patent: 4117507 (1978-09-01), Pacor
patent: 6005283 (1999-12-01), Kim et al.
patent: 6034413 (2000-03-01), Hastings et al.
patent: 6110767 (2000-08-01), Wu
patent: 7045830 (2006-05-01), Cai et al.
patent: 7285828 (2007-10-01), Salcedo et al.
patent: 2006/0118814 (2006-06-01), Cai
International Search Report of corresponding PCT Application No. PCT/US08/088595, dated Jun. 24, 2009, 2 pages.

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