Integrated low-k hard mask

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum

Reexamination Certificate

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C257S760000, C257S774000

Reexamination Certificate

active

11028884

ABSTRACT:
Embodiments of the invention provide a device with a hard mask layer between first and second ILD layers. The hard mask layer may have a k value approximately equal to the first and/or second ILD layers.

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M. Aono et al., “Dielectric Properties of Amorphous Carbon Nitride Films”, Mat. Res. Soc. Symp. Proc. vol. 593, 2000 Materials Research Society, pp. 493-498.
M. Aono, et al., “Amorphous Carbon Nitride Films As A Candidate For Low Dielectric Constant Materials”, Mat. Res. Soc. Symp. Proc. vol. 565, 1999 Materials Research Society, pp. 291-296.
H. Ohtake et al., “Cu Dual Damascene Interconnects With In-Situ Fluorinated Carbon-Nitride (FCN:-C=N(F)-) Barrier Layers In Low-K Organic Film”, 2002 IEEE, pp. 599-602.

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