Integrated logic circuit having insulated gate field effect tran

Details Integrated logic circuit having insulated gate field effect tran Integrated logic circuit having insulated gate field effect tran

1985-04-04

1987-09-22

James, Andrew J.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 46, 357 92, 307304, H01L 2702

Patent

active

046958657

ABSTRACT:
A semiconductor device includes insulated gate field effect transistors, with which logic gate circuits having a satisfactory switching speed and a high packing density can be realized. The logic gate circuits are composed of transistor structures having a common source zone (22), which each comprise a gate (33), a second semiconductor zone (25) and one or more drain zones (28) and are manufactured in DMOS technology. The gates are strip-shaped or have at least a strip-shaped part. The gate circuits can be integrated in a simple manner with one or more high-voltage transistors manufactured in DMOS technology.

REFERENCES:
patent: 4219828 (1980-08-01), Lardy et al.
patent: 4412242 (1983-10-01), Herman et al.

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