Integrated limiter and amplifying devices

Wave transmission lines and networks – Automatically controlled systems – Limiting of amplitude

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333 81A, 330135, 330307, 330 49, H03G 1104, H03G 320, H01P 122, H03F 314

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active

053411145

ABSTRACT:
Integrated circuit structure and processing is provided for a high power limiter including at least a first anti-parallel array of monolithically integrated Schottky diodes. In a further embodiment, integrated circuit structure and processing is provided for an MMIC, microwave and millimeter wave monolithic integrated circuit, including an amplifier and a high power limiter monolithically integrated on the same substrate.

REFERENCES:
patent: 4098921 (1978-07-01), Calviello
patent: 4131858 (1978-12-01), Niehenke et al.
patent: 4301233 (1981-11-01), Calviello
patent: 4665413 (1987-05-01), Calviello
patent: 4789645 (1988-12-01), Calviello et al.
patent: 4810980 (1989-03-01), Heston et al.
patent: 4876176 (1989-10-01), Calviello et al.
patent: 5047829 (1991-09-01), Seymour et al.
"High Performance GaAs Quasi-Planar Varactors for Millimeter Waves", J. Calviello et al, IEEE Trans. an Elect. Devices, vol. ED 21, No. 10, Oct. 1974, pp. 624-630.
"An Improved High Temperature GaAs Schottky Junction", J. Calviello et al Conf. on Active Semiconductor Devices for Microwves and Integrated Optics, Cornell Uiversity, Ithaca, N.Y., Aug. 19-21, 1975.
"Performance and Reliability of an Improved High-Temperature GaAs Schottky Junction and Native-Oxide Passivation", J. A. Calviello et al, IEEE Trans. an Elect. Devices vol. ED 24, No. 6, Nov. 1977, pp. 798-704.
"Wide-Band Subharmonically Pumped W-Band Mixer in Single-Ridge Fin-Line" P. J. Meier et al, IEEE Trans. on MTT-S vol. MTT-30, No. 12, Dec. 1982.
"First Successful Fabrication of High-Performance All-Refractory-Metal (Ta-Au) GaAs FET Using Very Highly Doped N+ Layers and Nonalloyed Ohmic Contacts", J. A. Calviello et al, Electronic Letters, vol. 22, No. 10, May 1986, pp. J10-J12.
"Ka-Band Front End With Monolithic Hybrid, and Lumped-Element IC's", P. Meier et al, IEEE Transaction on MTT vol. 34. No. 4, Apr. 1986.
"A High-Performance, Quasi-Monolithic 2 to 18 GHz Distributed GaAs FET Amplifier", A. Cappello et al, MTT-S 1987 Symposium, Las Vegas, Nevada.
"Integration of High-Q GaAs Varactor Diodes and 0.25 .mu.m GaAs MESFET's for Multifunction Millimeter-Wave Monolithic Circuit Applications", M. Gary McDermott et al, IEEE Trans on Microwave Theory and Techniques, vol. 38, No. 9, Sep 1990, pp. 1183-1190.

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