Patent
1987-09-23
1989-09-12
Clawson, Jr., Joseph E.
357 20, 357 22, 357 30, 357 46, 357 55, 357 56, 357 86, H01L 2974
Patent
active
048665002
ABSTRACT:
An integrated light-triggered and light-quenched static induction thyristor and fabrication process thereof adapted in such a manner that an integrated SIPT operates in the normal mode in order to enhance current gain, tail current generated at the light-quenching time is reduced in order to enhance turn-off gain, and a buried-gate type of light-triggered static induction thyristor and a photo-darlington circuit composed of a first and second static induction phototransistors are integrated on a high-resistivity substrate in order to permit manufacturing said thyristor compact as a whole in facilitated processes.
REFERENCES:
patent: 4721682 (1988-01-01), Graham et al.
IEEE Trans on Elec. Dev., vol. ED-27#11, "Buried-Grid Field-Controlled Thyristors Fabricated Using Silicon Liquid-Phase Epitaxy" B. Jayant Baliga, 1980 pp. 2141-2145.
"Totally Light Controlled Thyristor-Optically Triggerable and Optically Quenchable Static Induction Photo-Thyristor" Jun-ichi Nishizawa, Takashige Tamamushi & Ken-ichi Nonaka pp. 321-324, extended abstracts of 16th (1984 int.) conf. opn S.-S. devices & materials, Kobe.
Nishizawa Jun-ichi
Nonaka Ken-ichi
Tamamushi Takashige
Clawson Jr. Joseph E.
Zaidan Hojin Handotai Kankyu Shinkokai
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