Integrated light emitting/receiving amplifier element

Details Integrated light emitting/receiving amplifier element Integrated light emitting/receiving amplifier element

1985-05-14

1987-10-06

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 19, 357 40, H01S 319

Patent

active

046988211

ABSTRACT:
An integrated light amplifier in which a stripe laser is formed over a substrate and then a vertical phototransistor is formed over the laser. Electrodes are attached to the back of the substrate and to the top of the phototransistor with the phototransistor electrode being formed with a hole so that incident light can reach the phototransistor. Before formation of the substrate electrode, the substrate can be ground to the desired thickness. Photocarriers are detected and multiplied in the phototransistor and injected into the stripe laser. Additional electrodes may be provided over the laser in order to bias the laser independently of the incident light.

REFERENCES:
patent: 4349906 (1982-09-01), Seifres et al.
Katz et al., "A monolithic Integration of GaAs/GaAlAs Bipolar Transistor and Heterostructure Laser", Appl. Phys. Lett., 37(2), 15 Jul. 1980, pp. 211-213.

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