Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Patent
1991-06-07
1993-08-24
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
257 82, 257 99, 257458, H01L 3300
Patent
active
052391892
ABSTRACT:
An integrated semiconductor device includes a pair of spaced apart regions of semiconductor material on a surface of a substrate of semiconductor material. One of the regions is a light emitting device and the other region is a light detector device. Each of the regions is formed of a first layer on the substrate surface of a composition suitable for serving as a light detector active layer. Additional layers are on the first layer with at least one of the additional layers being of a composition to act as a light emitter active layer. A contact layer may be provided on the additional layers. The light detector region has a highly conductive region extending through the additional layers and slightly into the light detector active layer. The light emitter region may have a highly conductive region extending through some of the additional layers to the light emitting active layer. Thus, both the light emitting region and the light detecting region are formed from the same layers of semiconductor material.
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Eastman Kodak Company
James Andrew J.
Meier Stephen D.
Owens Raymond L.
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