Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2006-03-28
2009-06-09
Lindsay, Jr., Walter L (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S294000, C257SE21580
Reexamination Certificate
active
07545016
ABSTRACT:
An integrated layer stack arrangement, an optical sensor and a method for producing an integrated layer stack arrangement is disclosed. Generally, an integrated layer stack arrangement includes a plurality of layer stacks arranged on top of each other, each layer stack including a metal layer and a dielectric layer arranged; at least one photodiode integrated into the plurality of layer stacks; a trench arranged above the last least one photodiode, the trench extending through at least a portion of the plurality of layer stacks so that light impinging on the plurality of layer stacks impinges on the integrated photodiode along the trench; a first passivation partial layer applied on the plurality of layer stacks; and a second passivation partial layer applied on the plurality of layer stacks and a bottom and walls of the trench.
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International Search Report for corresponding International Patent Application No. PCT/DE2004/002165, dated Mar. 18, 2005.
Brinks Hofer Gilson & Lione
Infineon - Technologies AG
Lindsay, Jr. Walter L
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