Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1989-07-20
1997-01-21
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257583, 257584, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
055962203
ABSTRACT:
A method of manufacturing an integrated lateral transistor in which the depth and the doping level of the emitter region are such that the diffusion length of the minority carriers vertically injected into it is larger than or equal to the thickness of the emitter region. The distance between the peripheries of an electrical emitter connection zone and the emitter region is nominally larger than the alignment tolerance of an emitter contact window. This permits obtaining a transistor having an improved current amplification. An integrated circuit includes a lateral transistor, in which the ratio between the surface of the emitter region and that of the electrical emitter connection zone advantageous lies between 20 and 200.
REFERENCES:
patent: 4205333 (1980-05-01), Yamamoto
patent: 4510676 (1985-04-01), Anantha et al.
patent: 4689651 (1987-08-01), Hanna et al.
Last et al., "A Switching Lateral Transistor", IEEE Transactions on electron devices, vol. ED-18, No. 18, Aug. 1971, pp. 563 to 570.
Jacques Bertrand
Leduc Pierre
Biren Steven R.
Ngo Ngan V.
U.S. Philips Corporation
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