Integrated lateral high-voltage diode and thyristor

Details Integrated lateral high-voltage diode and thyristor Integrated lateral high-voltage diode and thyristor

2008-06-17

2010-12-28

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

C257S104000, C257S105000, C257S106000, C257S122000

Reexamination Certificate

active

07859009

ABSTRACT:
The present invention relates to integration of lateral high-voltage devices, such as a lateral high-voltage diode (LHVD) or a lateral high-voltage thyristor, with other circuitry on a semiconductor wafer, which may be fabricated using low-voltage foundry technology, such as a low-voltage complementary metal oxide semiconductor (LV-CMOS) process. The other circuitry may include low-voltage devices, such as switching transistors used in logic circuits, computer circuitry, or the like, or other high-voltage devices, such as a microelectromechanical system (MEMS) switch. The reverse breakdown voltage capability of the LHVD may be increased by using an intrinsic material between the anode and the cathode. Similarly, in a lateral high-voltage thyristor, such as a lateral high-voltage Silicon-controlled rectifier (LHV-SCR), the withstand voltage capability of the LHV-SCR may be increased by using an intrinsic material between the anode and the cathode.

REFERENCES:
patent: 6458632 (2002-10-01), Song et al.
patent: 6533907 (2003-03-01), Demaray et al.
patent: 6660616 (2003-12-01), Babcock et al.
patent: 7075122 (2006-07-01), Yang et al.
patent: 7135766 (2006-11-01), Costa et al.
patent: 7633095 (2009-12-01), Kerr et al.
patent: 2003/0089930 (2003-05-01), Zhao
patent: 2007/0007545 (2007-01-01), Salcedo et al.
patent: 2008/0237704 (2008-10-01), Williams et al.
patent: 2009/0162979 (2009-06-01), Yang et al.
Costa, J. et al., “Integrated MEMS Switch Technology on SOI-CMOS,” Proceedings of Hilton Head Workshop 2008: A Solid-State Sensors, Actuators and Microsystems Workshop.
Costa, J. et al, “A Silicon RFCMOS SOI Technology for Integrated Cellular/WLAN RF TX Modules,” Proceedings of the IEEE MTS Microwave Symposium, 2007, pp. 445-448, IEEE.
Guan, Lingpeng et al., “A Fully Integrated SOI RF MEMS Technology for System-on-a-Chip Applications,” IEEE Transactions on Electron Devices, Jan. 2006, pp. 167-172, vol. 53, No. 1, IEEE.
Joseph, Alvin et al., “A 0.35 um SiGe BiCMOS Technology for Power Amplifier Applications,” IEEE BCTM Conference Proceedings, 2007, pp. 198-201, IEEE.
Kelly, Dylan et al., “The State-of-the-Art of Silicon-on-Sapphire CMOS RF Switches,” Proceedings of the IEEE Compound Semiconductor Symposium, 2005, pp. 200-205.
Mazure, Carlos et al., “Engineering Wafers for the Nanotechnology Era,” Proceedings of ESSCIRC, 2005, pp. 29-38, IEEE.
Shokrani, Mohsen et al., “InGap-Plus(TM): A Low Cost Manufacturable GaAs BiFET Process Technology,” Proceedings of the GaAs MANTECH Conference, 2006 pp. 153-156.
Tinella, C. et al., “0.13um CMOS SOI SP6T Antenna Switch for Multi-Standard Handsets,” Topic Meeting on Silicon Monolithic Circuits in RF Systems, 2006, pp. 58-61, IEEE.
Tombak, Ali et al., “A Flip-Chip Silicon IPMOS Power Amplifier and a DC/DC Converter for GSM 850/900/1800/1900 MHz Systems,” Proceedings of the IEEE Radio Frequency Integrated Circuits Symposium, 2007, pp. 79-82, IEEE.
Wohlmuth, Walter A. et al., “E-/D-pHEMT Technology for Wireless Components,” Proceedings of the Compound Semiconductor Circuit Symposium, 2004, pp. 115-118, IEEE.
Mori, Kazuhisa et al., “A 5 to 130V Level Shifter composed of Thin Gate Oxide Dual Terminal Drain PMOSFETS,” IEEE Intl. Symp. Power Semiconductor Devices and ICs, 1997. pp. 345-348, IEEE.
Valeri, Stephen J. et al., “A Composite High-Voltage Device Using Low-Voltage SOI MOSFETS,” IEEE SOS/SOI Technology Conf., 1990, p. 169-170, IEEE.

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