Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-06-20
2006-06-20
Rodriguez, Armando (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
C372S012000, C372S050100
Reexamination Certificate
active
07065120
ABSTRACT:
A monolithic integrated component (10) comprises a plurality of sections (21, 22) including a section (21) constituting a laser having a cavity delimited by a partially reflecting reflector and at least one other section (22) adjacent said laser section (21). The partially reflecting reflector (11) is disposed between the laser section (21) and one of the adjacent sections (22) and is a Bragg reflector grating (11) that allows multimode operation of the laser (21).
REFERENCES:
patent: 4695790 (1987-09-01), Mathis
patent: 4773075 (1988-09-01), Akiba et al.
patent: 4977567 (1990-12-01), Hanke
patent: 5144637 (1992-09-01), Koch et al.
patent: 5463647 (1995-10-01), Pan
patent: 5793521 (1998-08-01), O'Brien et al.
patent: 5802084 (1998-09-01), Bowers et al.
patent: 5905745 (1999-05-01), Grubb et al.
patent: 6650673 (2003-11-01), Hong et al.
patent: 6678301 (2004-01-01), Eng et al.
patent: 360187078 (1985-09-01), None
Patent Abstracts of Japan, vol. 010, No. 027 (E-378), Feb. 4, 1986 corresponding to JP 60187078 (Matsushita Denki Sangyo KK) dated Sep. 24, 1985.
K. C. Reichmann et al, “2.5 GB/S Transmission Over 674 KM at Multiple Wavelengths using a tunable DBR Laser with an Integrated Electroabsorption Modulator”, IEEE Photonics Technology Letters, IEEE Inc., New York, US, vol. 5, No. 9, Sep. 1, 1993, pp. 1098-1100, XP000414187.
Patent Abstracts of Japan, vol. 012, No. 362 9E-663) Sep. 28, 1988 corresponding to JP 63 116489 A (Mitsubishi Electric Corp) dated May 20, 1988.
H. Bissessur et al. “WDM Operation of a Hybrid Emitter Integrating a Wide-Bandwidth on Chip-Mirror”, IEEE Journal of Selected Topics in Quantum Electronics, IEEE Service Center, US, vol. 5, No. 3, May 1999, pp. 476-479, XP000930527.
R. M. Lammert et a, “MQW DBR Lasers with Monolithically Integrated External Cavity Electroabosrption Modulators Fabricated without Modification of the Active Region”, IEEE Photonics Technology Letters, IEEE, Inc. NY, US, vol. 9, No. 5 May 1, 1997, pp. 566-568 XP000677326.
Brillouet François
Burie Jean-René
Avanex Corporation
Patterson & Sheridan LLP
Rodriguez Armando
LandOfFree
Integrated laser with Perot-Fabry cavity does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated laser with Perot-Fabry cavity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated laser with Perot-Fabry cavity will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3654279