Integrated laser and field effect transistor

Details Integrated laser and field effect transistor Integrated laser and field effect transistor

1983-06-22

1986-08-26

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 357 41, 372 46, H01S 319

Patent

active

046086960

ABSTRACT:
A monolithic device, including a substrate, a semiconductor laser formed in the substrate, and a metal-insulator-semiconductor field-effect transistor (MISFET) also formed in the substrate, in such a manner as to facilitate the use of planar fabrication techniques. In a first disclosed embodiment, the device is formed on an n+ substrate and the MISFET is operated in inversion mode. In a second embodiment, an n+ substrate is also employed, but the structure includes a semi-insulating layer to confine current-carrier flow in the MISFET, which is operated in depletion mode. In a third embodiment, a semi-insulating substrate is employed, and the laser is of the buried heterostructure type.

REFERENCES:
patent: 4352116 (1982-09-01), Yariv et al.
patent: 4366567 (1982-12-01), Fukuzawa et al.

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