Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1993-02-08
1995-07-11
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257440, 257 31, 257 21, H01L 2714, H01L 3100
Patent
active
054323746
ABSTRACT:
An integrated radiation detector (10) includes a substrate (12) having a first region (14) comprised of Group III-V semiconductor material, such as GaAs, formed over a first surface, and a second region (26) comprised of Group II-VI semiconductor material, for example HgCdTe, formed over a second, opposite surface. The second region has a bandgap selected for absorbing radiation within a first range of wavelengths, such as IR radiation within the range of 12 micrometers to three micrometers. A first detector includes an antenna structure (20) coupled to a Schottky contact (22) for detecting electromagnetic radiation having wavelengths within a second range of wavelengths, such as wavelengths corresponding to frequencies within a range of approximately 30 GHz to approximately 1000 GHz. A second detector includes a photoconductive or photovoltaic infrared detector for collecting charge carriers generated by the absorption of the IR radiation. For a substrate comprised of semi-insulating GaAs, a lattice accommodation region (28) is interposed between the substrate and the second region. An RF potential ground plane is disposed, relative to the Schottky contact, at a distance corresponding to 1/4 of a wavelength. A microlens (42) may be provided in registration with an underlying IR detector for focussing, through the substrate, incident IR radiation.
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Denson-Low W. K.
Meier Stephen D.
Ngo Ngan V.
Santa Barbara Research Center
Schubert W. C.
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