Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-09-02
2000-05-16
Hardy, David
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257535, H01L 2941
Patent
active
060641088
ABSTRACT:
An integrated, interdigitated capacitor incorporates all layers of an I.C. fabrication process into its design to produce a multi-layer high-capacitance device. For example, a "two-metal, two-poly" CMOS fabrication process is used to produce a capacitor having five interdigitated conductive plates, which when interconnected produce a total capacitance at least twice as great as a conventional two-plate capacitor of the same area, while requiring no additional I.C. processing steps. The invention's conductive plates and interconnections are arranged so that interconnection traces stay within strict design limits intended to insure reliable connections, while keeping the area required for the interconnections small.
REFERENCES:
patent: 4700457 (1987-10-01), Matsukawa
patent: 5773872 (1998-06-01), Kobatake
patent: 5861648 (1999-01-01), Shinozaki
J.P. Uyemura, Physical Design of CMOS Integrated Circuits Using L-Edit.TM., PWS Publishing Co., 1995, pp. 10-8 to 10-20.
G.W.A. Dummer, Radio and Electronic Components: Volumne 3-Fixed Capacitors, Sir Isaac Pitman & Sons Ltd., 1964, pp. 12-13.
P.E. Allen and D.R. Holberg, CMOS Analog Circuit Design, Holt, Rinehart and Winston, 1987, pp. 22-87.
Gudmestad Terje
Hardy David
Hughes Electronics Corporation
Sales M. W.
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