Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1983-01-25
1988-05-03
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307363, 307584, H03K 17687
Patent
active
047422530
ABSTRACT:
The circuit merely comprises three transistors, namely one transfer transistor (t) arranged between the input (e) and the output (a), a load transistor (l) connected as a resistor, and a clamping transistor (k), with both of the latter connecting the output (a) to the source of operating voltage (U). The interconnected gates of both the clamping and the transfer transistor (k, t) are connected to a source of reference voltage (Ur). If these two transistors (k, t) are of the depletion type, the two gates thereof may be connected to the zero point of the circuit. The circuit is particularly quick and simple.
REFERENCES:
patent: 4308468 (1981-12-01), Olson
patent: 4375600 (1983-03-01), Wu
patent: 4388541 (1983-06-01), Giebel
patent: 4443718 (1984-04-01), Hagiwara et al.
patent: 4459497 (1984-07-01), Kuo et al.
Hudspeth D. R.
IT&T Industries, Inc.
Miller Stanley D.
Peterson T. L.
LandOfFree
Integrated insulated-gate field-effect transistor circuit for ev does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated insulated-gate field-effect transistor circuit for ev, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated insulated-gate field-effect transistor circuit for ev will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1508393