Integrated injection logic structure fabricated by outdiffusion

Details Integrated injection logic structure fabricated by outdiffusion Integrated injection logic structure fabricated by outdiffusion

1976-10-29

1978-07-18

Dean, R.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29577C, 29580, 148187, 148188, 357 15, 357 44, 357 46, 357 56, 357 49, 357 90, 357 92, H01L 2122, H01L 2704

Patent

active

041013492

ABSTRACT:
Merged transistor logic integrated circuit wherein the vertical transistor is formed by auto-doping an epitaxial silicon layer for an improved transistor doping profile. Further device improvements are achieved by the incorporation of Schottky diodes into the circuit.

REFERENCES:
patent: 3768150 (1973-10-01), Sloan et al.
patent: 3823353 (1974-07-01), Berger et al.
patent: 3909807 (1975-09-01), Fulton
patent: 3922565 (1975-11-01), Berger et al.
Berger et al., "Base Ring Transistor and Method of Production" I.B.M. Tech. Discl. Bull., vol. 14, No. 1, Jun. 1971, p. 302.
Cook et al., "I.sup.2 L II" Int. Elect. Dev. Tech. Dig., 1975, pp. 284-287.
"Injection Logic's Range . . . . . " Electronics, vol. 48, No. 14, Jul. 10, 1975, pp. 86-89.
Berger et al., "Schottky Transistor Logic" ISSCC Digest of Tech. Papers, 1975, pp. 172-173.

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