Integrated injection logic semiconductor device

Details Integrated injection logic semiconductor device Integrated injection logic semiconductor device

1996-05-15

1999-12-28

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

Plural non-isolated transistor structures in same structure

257566, 257574, 257576, 438205, H01L 27082, H01L 27102, H01L 2970, H01L 3111

Patent

active

06008524&

ABSTRACT:
A logic circuit is formed of an I.sup.2 L cell structure in which a difference of switching speeds at every collector in a multi-collector structure is small. In a semiconductor device in which an integrated injection logic cell including a constant current source transistor and a switch transistor is formed on a common semiconductor substrate, a first semiconductor layer (13) doped with a first conductivity type impurity and a second semiconductor layer (19) doped with a second conductivity impurity are electrically isolated from each other on a semiconductor substrate. A plurality of collector electrodes of the switch transistor and a plurality of collector regions (20) based on diffusion of impurity are formed by the second semiconductor layer (19). The first semiconductor layer (13) includes a base electrode deriving portion, and a direct contact portion which directly contacts with the semiconductor substrate between a plurality of collector regions (20). An external base region (17) is formed by diffusion of first conductivity type impurity from the direct contact portion.

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patent: 5682059 (1997-10-01), Yoshii et al.
Ning, Tak H., "The Potential of Bipolar Devices for VLSI", Symp. of VLSITECH, Invited Paper, pp. 34-35, Dec. 1981.

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