Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1977-06-24
1979-07-10
Larkins, William D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307213, 307296R, 357 15, 357 35, 357 36, 357 38, 357 46, 357 51, 357 55, 357 60, 357 92, 148 15, 357 91, H01L 2704
Patent
active
041609883
ABSTRACT:
A semiconductor structure, and method for fabrication, including a semiconductor body of one conductivity type having a major surface. A layer of opposite conductivity material is formed on said surface, said layer having an upper planar surface generally parallel to said major surface. Spaced first and second collector regions are carried by said layer. A third one conductivity region is formed in said layer spaced from said first and second region and extending to an exposed surface of said layer. A fourth region of opposite conductivity type is formed within said third region and extends to an exposed surface of said layer. The layer, third and forth regions form the respective regions of an opposite conductivity--one conductivity--opposite conductivity type source transistor. Additionally, the body, the layer and the first and second regions form the respective regions of a one conductivity--opposite conductivity--one conductivity switching transistor wherein said first and second regions form multiple collectors.
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patent: 3394037 (1968-07-01), Robinson
patent: 3611067 (1971-10-01), Oberlin et al.
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patent: 4056810 (1977-11-01), Hart et al.
Hibberd, Integrated Circuits (McGraw-Hill, N.Y., 1969), pp. 39-41.
Dinardo Jerry A.
Larkins William D.
Oisher Jack
Signetics Corporation
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