Patent
1974-12-09
1976-09-21
Larkins, William D.
357 46, 357 50, H01L 2704
Patent
active
039822664
ABSTRACT:
An integrated injection logic (IIL) structure including active devices, one of which is a switching transistor having base current injection from another active device where an epitaxial zone forms an emitter-base junction. A diffused zone in the epitaxial layer forms a collector for the switching transistor and an insulating structure defines perimeters of the collector-base junction and the emitter-base junction such that the widths thereof are about equal for maximizing current gain with minimal temperature dependence.
REFERENCES:
patent: 3436279 (1969-04-01), Klein
patent: 3534234 (1970-10-01), Clevenger
patent: 3598664 (1971-08-01), Kilby
patent: 3648125 (1972-03-01), Peltzer
patent: 3736477 (1973-05-01), Berger et al.
patent: 3818289 (1974-06-01), Mudge
patent: 3823353 (1974-07-01), Berger et al.
patent: 3873989 (1975-03-01), Schinella et al.
Berger, "The Injection Model...(MTL)," IEEE Journal of Solid State Circuits, vol. SC9, Oct. 1974, pp. 218-224.
Wiedmann, "Injection-Coupled Memory," IEEE Journal of Solid State Circuits, vol. SC8, Oct. 1973, p. 337.
Evans et al., "Oxide-Isolated Monolithic...," IEEE Journal of Solid State Circuits, vol. SC8, Oct. 1973, pp. 374-378.
Matzen Walter T.
Workman Wilton L.
Comfort James T.
Honeycutt Gary C.
Larkins William D.
Levine Harold
Texas Instruments Incorporated
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