Integrated injection logic gate with heavily doped diffusion

Details Integrated injection logic gate with heavily doped diffusion Integrated injection logic gate with heavily doped diffusion

1989-11-30

1991-05-14

Mintel, William

357 35, 357 36, 357 92, H01L 2702, H01L 2972

Patent

active

050160796

ABSTRACT:
A structure for an Integrated Injection Logic (I.sup.2 L) gate is disclosed in which gate gain .alpha.*.beta. is improved and leakage current at the silicon-silicon dioxide interface is reduced. A plug of highly doped material is interposed between the emitter and the collector of the lateral transistor to accomplish these goals.

REFERENCES:
patent: 4412142 (1983-10-01), Ragonese et al.
patent: 4779126 (1988-10-01), Herman

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