Integrated injection logic

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Details

357 86, 357 92, H01L 2704, H03K 19091

Patent

active

044700610

ABSTRACT:
An integrated injection logic having a first semiconductor region of first conductivity type, a second semiconductor region of second conductivity type formed in the first semiconductor region, a plurality of third semiconductor regions of first conductivity type formed in the second semiconductor region, and a fourth semiconductor region of second conductivity type formed in the first semiconductor region. A fifth semiconductor region of second conductivity type is formed in the first semiconductor region and in the vicinity of the second semiconductor region and is connected to one of the plurality of third semiconductor regions in order to eliminate minority carriers stored in the first semiconductor region and the second semiconductor region.

REFERENCES:
patent: 4009397 (1977-02-01), Mulder et al.
patent: 4080577 (1978-03-01), Asada et al.
patent: 4243896 (1981-01-01), Chapron
patent: 4286177 (1981-08-01), Hart et al.
patent: 4385433 (1983-05-01), Ozawa

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