Coherent light generators – Particular active media – Semiconductor
Patent
1989-08-30
1991-02-19
Epps, Georgia
Coherent light generators
Particular active media
Semiconductor
372 18, 372 32, 372 44, H01S 319, H01S 3098
Patent
active
049950479
ABSTRACT:
A continuous wave integrated injection-locked high-power diode laser array is provided with an on-chip independently-controlled master laser. The integrated injection locked high-power diode laser array is capable of continuous wave lasing in a single near-diffraction limited output beam at single-facet power levels up to 125 mW (250 mW total). Electronic steering of the array emission over an angle of 0.5 degrees is obtained by varying current to the master laser. The master laser injects a laser beam into the slave array by reflection of a rear facet.
REFERENCES:
patent: 4686485 (1987-08-01), Goldberg et al.
patent: 4751705 (1988-06-01), Hadley et al.
patent: 4907234 (1990-03-01), Goldberg et al.
C. Lindstrom et al., "High-Power, High-Brightness, Phase-Locked Broad-Stripe Diode Lasers", Applied Physics Letters, vol. 53, No. 7, Aug. 15, 1988, pp. 555-556.
D. Welch et al., "High-Power, 8W CW, Single-Quantum-Well Laser Diode Array", Elect. Lett., vol. 24, No. 2, 01/21/88, pp. 113-115.
L. Goldberg et al., "Injection Locking of Coupled-Stripe Diode Laser Arrays", Applied Physics Letters, vol. 46, No. 3, 02/01/85, pp. 236-238.
J. Hohimer et al., "Single-Channel Injection Locking of a Diode-Laser Array with a CW Dye Laser", Applied Physics Letters, vol. 47, No. 12, Dec. 15, 1985, pp. 1244-1246.
L. Goldberg et al., "Injection Locking and Single-Mode Fiber Coupling of a 40-Element Laser Diode Array", Applied Physics Letters, vol. 50, No. 24, Jun. 15, 1987, pp. 1713-1715.
D. Wagner et al., "Operating Characteristics of Single-Quantum-Well A1GaAs/GaAs High-Power Lasers", IEEE Journal of Quantum Electronics, vol. 24, No. 7, Jul. 1988, pp. 1258-1264.
S. Corzine et al., "Continuous Tunability in Three-Terminal Coupled-Cavity Lasers", Applied Physics Letters, vol. 48, No. 18, May 5, 1986, pp. 1190-1192.
R. Defreez et al., "CW Operation of Widely and Continuously Tunable Micromachined-Coupled-Cavity Diode Lasers", Electronics Letters, vol. 22, No. 17, Aug. 14, 1986, pp. 919-921.
Murata et al., "Frequency Modulation and Spectral Characteristics for a 1.5 .mu.m Phase-Tunable DBF Laser", Electronics Letters, vol. 23, No. 1, Jan. 2, 1987, pp. 12-14.
T. Numai et al., "1.5 .mu.m Wavelength Tunable Phase-Shift Controlled Distributed Feedback Laser Diode with Constant Spectral Linewidth in Tuning Operation", Electronics Letters, vol. 24, No. 24, Nov. 24, 1988, pp. 1526-1528.
G. Hadley et al., "Modeling of Injection-Locking Phenomena in Diode-Laser Arrays", Optics Letters, vol. 11, No. 3, Mar. 1986, pp. 144-146.
Hadley G. Ronald
Hohimer John P.
Owyoung Adelbert
Chafin James H.
Daniel Anne D.
Epps Georgia
Moser William R.
The United States of America as represented by the United States
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