Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1978-01-04
1981-01-06
Anagnos, Larry N.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
357 15, 307213, 357 22, 357 92, H03K 19017, H03K 19094, H03K 1920, H01L 2980
Patent
active
042438950
ABSTRACT:
An integrated injection circuit is proposed which comprises a current generator and a normally cutoff n-channel field-effect transistor. The gate of the FET is connected to the current generator and to the input electrode of the circuit, the source is grounded and the drain is connected to the output electrode of the circuit. The gate of the FET is designed as at least one non-injecting rectifying contact.
REFERENCES:
patent: 3912546 (1975-10-01), Hunsperger et al.
patent: 3987310 (1976-10-01), Peltier et al.
patent: 4035664 (1977-07-01), Berger et al.
patent: 4076556 (1978-02-01), Agraz-Guerena et al.
patent: 4101349 (1978-07-01), Roesner et al.
patent: 4110634 (1978-08-01), Tokumaru et al.
Electronics (pub.); "Junction Field-Effect Transistor Design for Speedy Logic," pp. 4E, 6E; Aug. 19, 1976.
Berger et al., "Advanced Merged Transistor Logic by Using Schottky Junctions," Microelectronics, vol. 7, No. 3, pp. 35-42, 1976.
Poorter, "Electrical Parameters, Static and Dynamic Response of I.sup.2 L," IEEE-JSSC, vol. SC-12, No. 5, pp. 440-449, Oct. 1977.
Hewlett, Jr., "Schottky I.sup.2 L," IEEE-JSSC, vol. SC-10, No. 5, pp. 343-348, Oct. 1975.
Kokin Vilyam N.
Kremlev Vyacheslav Y.
Lavrov Vadim V.
Nazarian Artashes R.
Sladkov Viktor I.
LandOfFree
Integrated injection circuit does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Integrated injection circuit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated injection circuit will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-287071