Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2010-11-19
2011-12-06
Coleman, William D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE21022, C438S381000
Reexamination Certificate
active
08072042
ABSTRACT:
A method for integrating an inductor into a semiconductor substrate is provided. The method includes providing a semiconductor substrate having a first surface and a second surface and forming at least a first trench and at least two openings in the semiconductor substrate. The first trench and the openings extend from the first surface into the semiconductor substrate, and the first trench has a ring-like shape. A portion of the first trench is arranged between the two openings. The method further includes depositing a magnetically soft material into the first trench to form a ring-like closed magnetisable core structure, depositing a conductive material into the openings to form vias, and forming an electrical cross-connection between the vias.
REFERENCES:
patent: 2011/0073987 (2011-03-01), Mackh et al.
Ralph Steiner Banha et al., “Trench-Hall Devices”, Journal of Microelectromechanical Systems, vol., 9, IEEE,, Mar. 2000, pp. 82-87.
Coats & Bennett P.L.L.C.
Coleman William D
Infineon Technologies Austria AG
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