Integrated inductor and capacitor on a substrate and method for

Details Integrated inductor and capacitor on a substrate and method for Integrated inductor and capacitor on a substrate and method for

1997-12-22

1999-06-22

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

257375, 257377, 257531, H01L 2702

Patent

active

059151889

ABSTRACT:
An integrated inductor-capacitor (L-C) structure can be formed on a semiconducting substrate (10) by depositing a metal layer in a pattern that contains an inductor coil (14) and a capacitor bottom electrode (12). A CuFe.sub.2 O.sub.4 film (16) is then deposited on the substrate and over the metal pattern to form the dielectric portion of the L-C structure. A via (17) created in the CuFe.sub.2 O.sub.4 film exposes a portion of the inductor coil. Another metal layer (18) is then deposited over the CuFe.sub.2 O.sub.4 film and in the via, such that this metal layer is electrically connected to the inductor coil through the via. A pattern is also made in the second metal layer to form a top electrode (19) for the capacitor, over the corresponding capacitor bottom electrode, and to form a circuit interconnect to the inductor coil through the via.

REFERENCES:
patent: 4471405 (1984-09-01), Howard et al.
patent: 5083236 (1992-01-01), Chason et al.
patent: 5492856 (1996-02-01), Ikeda et al.

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