Integrated high voltage transistors having minimum transistor to

Details Integrated high voltage transistors having minimum transistor to Integrated high voltage transistors having minimum transistor to

1990-03-16

1991-12-31

James, Andrew J.

357 34, 357 20, 357 88, H01L 2972, H01L 2906

Patent

active

050775944

ABSTRACT:
Integrated high voltage transistors having minimum transistor to transistor crosstalk are fabricated in refilled epitaxial tubs, which are formed in a heavily doped substrate. The heavily doped substrate provides the isolation between each transistor, and thus provides for minimum transistor to transistor crosstalk. The voltage capability of the transistor is increased by forming the base surrounding the collector contact in the refilled epitaxial tub.

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patent: 4160988 (1979-07-01), Russell
patent: 4255209 (1981-03-01), Morcom et al.
patent: 4929996 (1990-05-01), Hutter
Berger, "Method of Producing a Lateral Transistor", IBM Technical Disclosure Bulletin, vol. 23, No. 3, Aug. 1980.
Anantha et al, "High-Voltage Power Transistors", IBM Technical Disclosure Bulletin, vol. 16, No. 9, Feb. 1974.

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