Integrated high-performance decoupling capacitor

Details Integrated high-performance decoupling capacitor Integrated high-performance decoupling capacitor

1996-12-20

1998-09-22

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257532, 257520, 257502, 257503, 257508, 257307, 257309, 257 71, 257758, 3613062, 361271, H01L 2978, H01L 2708

Patent

active

058118683

ABSTRACT:
An integrated high-performance decoupling capacitor, formed on a semiconductor chip, using the substrate of the chip itself in conjunction with a metallic deposit formed on the presently unused chip back surface and electrically connected to the active chip circuit to result in a significant and very effective decoupling capacitor in close proximity to the active circuit on the chip requiring such decoupling capacitance.
Specifically the present invention achieves this desirable result by providing a dielectric layer on the unused backside of the chip and forming a metal deposit on the formed backside dielectric layer and an electrical connection, between the metallic deposit and the active chip circuit via a through hole in the chip.
Very precise decoupling of selected areas in the chip circuit can be achieved by forming precise and multiple metal deposits of either the same size or of varying sizes to define specific capacitances and individually connecting these deposits to the circuit areas needing the precise decoupling capacitance.

REFERENCES:
patent: 4675717 (1987-06-01), Herrero et al.
patent: 4881115 (1989-11-01), Lesk et al.
patent: 4900689 (1990-02-01), Bajor et al.
patent: 4945399 (1990-07-01), Brown et al.
patent: 4959705 (1990-09-01), Lemnios et al.
patent: 5034850 (1991-07-01), Hernandez et al.
patent: 5097315 (1992-03-01), Shiga
patent: 5162264 (1992-11-01), Haug et al.
patent: 5208726 (1993-05-01), Apel
patent: 5212402 (1993-05-01), Higgins, III
patent: 5351163 (1994-09-01), Dawson et al.
patent: 5407854 (1995-04-01), Baxter et al.
patent: 5442223 (1995-08-01), Fujii
patent: 5472900 (1995-12-01), Vu et al.
patent: 5581110 (1996-12-01), Razonk et al.
Agusta et al. "Monolithic Integrated Semiconductor Structure with Multilevel Conductive Interconnection Planes" I.B.M. Technical Disclosure Bulletin, vol. 9, No. 7 pp. 951-952, Dec. 1966.
"Integrated, Low Inductance, Small Area Capacitors For VLSI Semiconductor Packages", C.H. Bajorek, et al., IBM Tech. Discl. Bull., vol. 25, No. 2, Jul. 1982, pp. 883-888.
"Decoupling Capacitor Placement", J. Parisi, IBM Tech. Discl. Bull., vol. 19, No. 8, Jan. 1977, pp. 3046-3047.

Affiliated with

Also associated with

Rating

Integrated high-performance decoupling capacitor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Integrated high-performance decoupling capacitor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Integrated high-performance decoupling capacitor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1624996